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Brand Name : Vishay
Model Number : IRFP240
Place of Origin : CHINA
MOQ : 10 PCS
Price : Negotiation
Payment Terms : T/T, Western Union , ESCROW
Supply Ability : 10000PCS
Delivery Time : STOCK
Packaging Details : TUBE
Categories : Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Power Dissipation (Max) : 150W (Tc)
IRFP240 General Purpose Rectifier Diode N-Channel 200V 20A (Tc) 150W (Tc) Through Hole
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching • Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |


Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
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IRFP240N Channel General Purpose Schottky Diode Silicon Rectifier Diode Images |